SCAS221A - FEBRUARY 1993 - REVISED SEPTEMBER 1995
The SN74ACT7200L, SN74ACT7201LA, and SN74ACT7202LA are constructed with dual-port SRAM and have internal write and read address counters to provide data throughput on a first-in, first-out (FIFO) basis. Write and read operations are independent and can be asynchronous or coincident. Empty and full status flags prevent underflow and overflow of memory, and depth-expansion logic allows combining the storage cells of two or more devices into one FIFO. Word-width expansion is also possible.
Data is loaded into memory by the write-enable (W\) input and unloaded by the read-enable (R\) input. Read and write cycle times of 25 ns (40 MHz) are possible with data access times of 15 ns.
These devices are particularly suited for providing a data channel between two buses operating at asynchronous rates. Applications include use as rate buffers from analog-to-digital converters in data- acquisition systems, temporary storage elements between buses and magnetic or optical memories, and queues for communication systems. A 9-bit-wide data path is provided for the transmission of byte data plus a parity bit or packet-framing information. The read pointer can be reset independently of the write pointer for retransmitting previously read data when a device is not used in depth expansion.
The SN74ACT7200L, SN74ACT7201LA, and SN74ACT7202LA are characterized for operation from 0°C to 70°C.