SN74BCT2411
11-BIT MOS MEMORY DRIVER
WITH 3-STATE OUTPUTS

SCBS254 - JUNE 1991 - REVISED NOVEMBER 1993

features

• State-of-the-Art BiCMOS Design Significantly Reduces I_CCZ
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required
• Packaged in Plastic Small-Outline Package

description

The SN74BCT2411 is an inverting 11-bit buffer/line driver specifically designed to drive MOS DRAMs of up to 4 megabits. It is also suitable for use with wide data paths or buses carrying parity. The outputs, which are designed to source 1 mA and sink 12 mA, include 33- series resistors to reduce overshoot and undershoot.

The output-enable ( and ) inputs are routed internally to a two-input AND gate with active-low inputs. When both and are low, the Y outputs are active (high or low logic level). When either or is high, the Y outputs are in the high-impedance state.

The multiple ground pins of the SN774BCT2411 reduce switching noise for more reliable system operation.

The SN74BCT2411 is characterized for operation from 0°C to 70°C.