TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED
DECEMBER 15, 1995
- Current-Bias/Current-Sense Architecture
- Fabricated Using LinIMPACTM- CE BiCMOS Technology
- Operates From a Single 5-V Supply (±10%)
- Low-Power Idle Mode
- Single-Ended Input to Reader With One Side Grounded
- True Differential Read Output
- Wide Magnetoresistive (MR) Resistor [R (MR) ] Range From 10
to 40
- MR-Head Bias Current [I I(BIAS) ] Programmable From 7 mA to
17 mA
- Buffered-Head-Voltage [V (BH) ] Monitor
- Gain: 230 V/V at R (MR) = 20
- Bandwidth: – 65 MHz at –1 dB [R (MR) = 20
] – 140 MHz at –3 dB [R
(MR) = 20
]
- Equivalent Input Noise = 0.55 nV/
at R (MR) = 20
- Write-Head Current Programmable From 10 mA to 35 mA (Base to
Peak)
- Write-Current Rise/Fall Time = 3.7 ns – L I(TF) (Head Only) =
180 nH – R I(TF) = 15
,
L (lead) = 50 nH – I I(W) = 25 mA
- Fast Recovery Times: – Write to Read = 0.8 ms (BHV/
=L) – Read to Write = 50 ns
- Output Capacitance = 8.5 pF for Write
- Multichannel Servo Write: – Upper or Lower Half Channels –
Every Two Channels – All Channels
- Read-Fault (RUS), Write-Fault (WUS), and Idle-Fault (IUS)
Detection
- MR-Head Open Protection and MR-Head Short Detection Available
(Metal Option, Disabled)
- Thermal-Asperity Detection Available (Metal Option, Disabled)
- Pseudo-ECL (PECL) Differential-Write-Data (WDX and WDY)
Inputs
- Write Data Divided-by-2 (FF) Circuit Available (Metal Option,
Disabled)
- Channel Separation 70 dBa at f = 25 MHz
- Power-Supply Rejection Ratio (PSRR) 50 dB at 25 MHz (Input
Referred)
- MR Bias On During Write Mode; Otherwise, Programmable On/Off
- Input Control Lines: – Head Select HS (2 Channel) or HS0 –
HS2 (6 Channel) With Internal Pullup Resistors – R/W With Internal
Pullup Resistor –
With
Internal Pullup Resistor – BHV/
With Internal Pulldown Resistor
- Packaged in 30-Pin (2 Channel) and 38-Pin (6 Channel) Plastic
TSSOP Packages
- Optimized for Package-On-Arm Applications
description
The TLS24302 and TLS24306 are read/write BiCMOS preamplifiers
designed for use with magnetoresistive (MR)/thin-film (TF) recording
heads. The MR element is used for reading and the inductive thin-film
section of the head is used for writing. The preamplifiers implement
a current-bias/current-sense architecture. Both have a single-ended
read input with a fully differential read (RDX, RDY) output that
operates from a single 5-V supply.
The write-head current I I(W) and MR-head bias current I I(BIAS)
are programmable using external resistors. Recovery time is reduced
by holding BHV/
low during the
write mode. Multichannel servo write is achieved by taking FLT/SE
higher than V CC by at least 1.2 V. An optional booster circuit can
be used to achieve higher operating frequencies.
A fault terminal (FLT/SE) goes low when the WDX/WDY input
frequency is low, a head is shorted or open, there is no write
current (Ix or Iy), or if V CC is low. Additionally, the
preamplifiers provide an optional thermal-asperity detection circuit
that can be enabled by using an optional metal mask during the
fabrication process.
Table 1 lists the functions that can be changed by a custom metal
mask during the fabrication process. Contact your local Texas
Instruments (TI) sales office or representative for further
information.