The next generation Power+ Arrays feature integrated high-current 18 V Zener diodes to help prevent gate damage in the event of a voltage transient. The advantage is that you can now enjoy extended ESD protection (4000 V) plus the high performance of power MOSFET arrays. Logic-level versions are also available.
These new Power+ Arrays devices feature monolithic gate-protected power DMOS transistor arrays that integrate up to six electrically isolated or configured N-channel enhancement-mode DMOS power transistors. The combination of integrated gate-source Zener diodes and energy-rated drain-source Zener diodes provides system designers a level of protection against operating and static-induced voltage spikes. The logic-level versions also offer the flexibility for direct interface to standard logic levels.
These gate-protected Power+ Arrays are well-suited for ESD-sensitive and noise-intensive applications, including fractional horsepower motors in various office end equipment, such as: hard-disk drives, printers, plotters, copiers, and fax machines. Other industrial applications that can benefit from this protection include: automated test equipment, process control systems, programmable machine tools, and robotics.
Power MOSFETs no longer have to be ESD-sensitive. Rated at twice the industry standard for integrated circuits, these new Power+ Arrays can provide up to 40 times the protection of power discretes and hybrids. These gate-protected Power+ Arrays can perform in a rugged environment, plus logic-level versions can further simplify pre-drive circuitry.
Vol 11, Spring, 1995