
TMS626162 16-Megabit Synchronous DRAM Fact Sheet
Summary of Key Features:
- 16 Megabits organized in 512K words by 16 bits wide by two
banks
- Synchronized to system clock for simplified design and enhanced
performance over traditional asynchronous DRAM
- Pipeline architecture allows a new column address entry on
every single clock cycle
- High bandwidth up to 83 MHz
- High speed allows for a Unified Memory Architecture (UMA)
with no separate graphics memory and elimination of discrete cache
in cost sensitive applications
Programmable for serial or interleaved output
- Programmable burst lengths of one, two, four, or eight words,
or a full page
- Available in industry standard 168-pin DIMMs (Dual Inline
Memory Modules)
- IBIS I/O interface models available for system design
- High-speed, low noise LVTTL interface
- Compatible with JEDEC memory standards
- Power-down mode to conserve power consumption
- Fabricated using the state-of-the-art EPIC (Enhanced Performance
Implanted CMOS)
# # #
Trademarks:
EPIC is a trademark of Texas Instruments Incorporated.
Search the Semiconductor News Release Archives
TI Home
Search
Feedback
Semiconductor Home