• Wide operating frequency range up to 1000 MHz
• High output power:
• Typically 32.5 dBm @ 4.8V and 900 MHz
• Typically 29 dBm @ 3.6V and 900 MHz
• High gain:
• Typically 9.5 dB gain and 50% PAE @ 4.8V, 900 MHz and 32.5 dBm output power
• Power-added=efficiency (PAE):
• Typical value of 50% @ 4.8V, 900 MHz and 32dBm output power
• Low leakage current (< 1 uA)
• Extremely rugged: sustains 20:1 load mismatch
• SOT-89 plastic power package
• 1500 Volt Human Body Model ESD protection on gate and drain

Summary:  The TRF7003 power amplifier is a silicon metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS™ process. It is housed on a SOT-89 (PK) plastic power package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost device, operates from a single-polarity positive power supply and has very low leakage current. Typical output power at 900 MHZ is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE). The TRF7003 offers built-in ESD protection on the gate and drain terminals.