TRF7610

TRF7610

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Silicon MOSFET Power Amplifier IC for GSM

Features:

Single positive power supply (no negative voltage required)
4.8 volt operation for GSM applications
35 dBm typical output power
30 dB typical power gain
40% typical power added efficiency with 5 dBm input power
45% typical power added efficiency with 8 dBm input power
Output power control
Thermally enhanced surface mount package for small circuit footprint
Rugged, sustains 20:1 load mismatch
Low standby current; <10uA
Advanced silicon RFMOS™ technology

Summary: The TRF7610 is a silicon MOSFET power amplifier IC for 900 MHz applications, tailored specifically for global systems for mobile (GSM) applications. It is manufactured using the RFMOS™ process and consists of a three stage amplifier with output power control. Few external components are required for operation. All interstage matching is included on-chip.

The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section of a transmitter to a level sufficient for connection to the antenna. The RF input port and the RF output port require simple external matching networks. A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications for time-division multiple-access (TDMA) systems.

The TRF7610 is available in a thermally enhanced, surface mount, 24-pin PowerPAD™ thin-shrink small-outline package (TSSOP). The package has a solderable pad that improves the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a low-inductance electrical path to ground.