• 800-1000 MHz transmit driver amplifier
• 3.0-5.5V operation (7.5V max )
• Suitable for 4.8V GSM and 3.6V AMPS/DAMPS
• +22dBm output @ 3.6V / +24 dBm @ 4.8V
• 25 dB power gain
• 40 dB power control range
• Proprietary power control linearizer circuit
• Transmit enable/disable ( low leakage )
• Low AM-PM at full-power
• Thermally enhanced TSSOP20 package
• 50-ohm input match

Summary:  The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog and dual-mode communication applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time division multiple access) applications. Very few external components are required for operation.

The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of RFOUT is approximately 50 Ohms. But, since RFOUT is connected to an open-collector output device, minimal external matching is required.

The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems. The power control signal causes a linear change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power applied to RFIN a 0 dBm and TXEN high, adjusting VPC from 0 V to 3 V increases the output power from a typical value of –54 dBm at VPC=0 V to the output power appropriate for the application.:

• 21 dBm typical AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular) operation
• 23 dBm typical GSM (Global System for Mobile Communications) operation

Forward isolation with an RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dBm.