Features:
- 800-1000 MHz transmit driver amplifier
- Suitable for 4.8V TDMA applications
- 26 dBm typical output power
- 21 dB power gain
- >60 dB power control range
- Proprietary power control linearizer circuit
- Transmit enable/disable ( low leakage )
- Thermally enhanced TSSOP20 package
- 50-ohm input match
Summary: The TRF8011 RF transmit driver amplifier is for use in 800 – 1000 MHz wireless communications systems. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time division multiple access) applications. Very few external components are required for operation. The input is dc-blocked and requires no external matching. The output requires external matching suitable for the application frequency.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems. The power control signal causes a linear change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power applied to RFIN at 5 dBm and TXEN high, adjusting VPC from 0 V to 3 V increases the output power from a typical value of –50 dBm to 26 dBm at 900 MHz. Forward isolation with the input power applied to RFIN at 5 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.
The TRF8011 is available in a small, surface-mount, thermally enhanced TSSOP 20-pin PWP (PowerPADTM) package and is characterized for operation from –40°C to 85°C. The PWP package has a solderable pad that can improve the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a low-inductance electrical path to ground and, for the TRF8011, must be electrically connected to the PCB ground plane as a continuation of the regular package terminals that are designated GND.
