Related Product Information

In This Issue

   DSP Solutions
The latest word in Wireless
The power of 1V
Finally! Chip technology matches
  designer imagination

   Memory
New 64-Mbit SDRAMs
   now sampling
Hitachi, Mitsubishi and TI
  to develop 1-GB DRAMs

   Other Stories
Make your PCI bus
  perform 4x faster
TI-Japan, Matsushita develop
  1394 IC for digital video

   Product Update
Power+ FET pre-drivers
Test-drive the TMS320C54x

Trade Shows

Hitachi, Mitsubishi and TI to develop 1-GB DRAMs

Hitachi, Ltd., Mitsubishi Electric Corporation and Texas Instruments have signed an agreement to jointly develop 1-gigabit dynamic random-access memory (DRAM) chips.

Joint activities include technology sharing, research and development of process and design capabilities continuing with prototyping 1-gigabit DRAM chips.

To meet rapid industry growth and innovation in semiconductor memory chips, huge investments are required for complex and expensive technology development. This agreement allows the three companies to share the required resources and leading-edge technologies.

Since 1988, Hitachi and TI have been cooperating on the research and development of 16-, 64- and 256-megabit DRAM chips, while Hitachi and Mitsubishi have jointly developed 8-, 16- and 64-megabit flash memory chips.

In 1995, TI and Hitachi also formed a joint venture, TwinStar Semiconductor Incorporated, a half-billion-dollar wafer fabrication facility located in Richardson, Texas.